8A, 600V, RDS(ON)(TYP.)=0.96Ω@VGS=10V Low Gate Charge Low Crss Fast Switching Improved dv/dt Capability 1 Gate 2 Drain 3 Source TO-220P REF. A B C D E F G Millimeter.

The SSE08N60SL is an N-channel enhancement mode power MOS field effect transistor which is produced. The improved planar strip cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superio.

SSE04N60SL

SSE04N65SL

SSE07N80SL

SSE102N10SV-C

SSE104N10-C

SSE105P03-C

SSE110N03-03P

SSE12N65SL

SSE133N12S-C

SSE14N65H-C

SSE16020

SSE166N10SV-C

SSE190N04S-C

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