Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source .

. TO-220P FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline .

The SSE12N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-220P FEATURES Advanced high cell density Tre.

SSE102N10SV-C

SSE104N10-C

SSE105P03-C

SSE110N03-03P

SSE133N12S-C

SSE14N65H-C

SSE16020

SSE166N10SV-C

SSE190N04S-C

SSE04N60SL

SSE04N65SL

SSE07N80SL

SSE08N60SL

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