Download SMG2322N Datasheet PDF
SeCoS Halbleitertechnologie GmbH
SMG2322N
SMG2322N is N-Channel MosFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES - Low RDS(on) provides higher efficiency and extends battery life. - Low thermal impedance copper leadframe SC-59 saves board space. - Fast switching speed. - High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package SC-59 3K Leader Size 7’ inch SC-59 Top View D F GH 3 2 REF. A B C D E F Millimeter Min. 2.70 2.25 1.30 Max. 3.10 3.00 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise specified) Parameter Symbol...