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SMG2325 - N-Channel MosFET

Description

The SMG2325 is the N-Channel logic enhancement mode power filed effect transistors are produced using high Cell density, DMOS trench technology.

Features

  • Simple Drive Requirement Small Package Outline.

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Datasheet Details

Part number SMG2325
Manufacturer SeCoS
File Size 384.78 KB
Description N-Channel MosFET
Datasheet download datasheet SMG2325 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMG2325 0.45A , 250V , RDS(ON) 1.7Ω N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SMG2325 is the N-Channel logic enhancement mode power filed effect transistors are produced using high Cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state Resistance FEATURES Simple Drive Requirement Small Package Outline MARKING 2325 PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.
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