SMG2310 Datasheet | SeCoS Halbleitertechnologie GmbH

Description The SMG2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SC-59 package is universally used for all mercial-industrial applications Features - Simple drive requirement - Small package outline Applications - Power management in Notebook puter - Portable equipment - Battery powered system S Top View H Drain Gate Source Marking : 2310 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3 VGS@4.5V Continuous Drain Current,3 VGS@4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID@TA=25 o C ID@TA=70 o C IDM PD@TA=25 o C Tj, Tstg SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Ratings 60 ±20 3.0 2.3 10 1.38 0.01 -55~+150 Unit V V A A A W W / o C o C Thermal Data Parameter Thermal Resistance Junction-ambient3 Symbol Rthj-a Ratings 90 Unit o C /W http://.Se Co SGmb H./ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente 3A, 60V,RDS(ON)...