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SMG2310N - N-Channel MosFET

Datasheet Summary

Description

These miniature surface mount MOSFETs utilize High Cell Density process.

Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.

Features

  • Low RDS(on) provides higher efficiency and extends battery life.
  • Low gate charge.
  • Fast switch.

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Datasheet preview – SMG2310N

Datasheet Details

Part number SMG2310N
Manufacturer SeCoS
File Size 707.51 KB
Description N-Channel MosFET
Datasheet download datasheet SMG2310N Datasheet
Additional preview pages of the SMG2310N datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SMG2310N 2.2A, 30V, RDS(ON) 65 m N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low gate charge  Fast switch PACKAGE INFORMATION Package MPQ SC-59 3K LeaderSize 7’ inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF.
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