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SMG2306 - N-Channel MosFET

Description

The SMG2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

Features

  • Capable of 2.5V gate drive.
  • Lower on-resistance.
  • Reliable and Rugged.

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Datasheet Details

Part number SMG2306
Manufacturer SeCoS
File Size 437.75 KB
Description N-Channel MosFET
Datasheet download datasheet SMG2306 Datasheet

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Full PDF Text Transcription

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Elektronische Bauelemente SMG2306 5.3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMG2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications Features * Capable of 2.5V gate drive * Lower on-resistance * Reliable and Rugged Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System A L 3 S Top View 21 B D G C H Drain Gate Source G J K D SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.
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