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SMG2302N - N-Channel MOSFET

Datasheet Summary

Description

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life.
  • Low thermal impedance copper lead frame SC-59 saves board space.
  • Fast switching speed.
  • High performance trench technology.

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Datasheet Details

Part number SMG2302N
Manufacturer SeCoS
File Size 714.10 KB
Description N-Channel MOSFET
Datasheet download datasheet SMG2302N Datasheet
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Full PDF Text Transcription

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Elektronische Bauelemente SMG2302N 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper lead frame SC-59 saves board space.  Fast switching speed.  High performance trench technology. Application DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
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