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SGM2306 - N-Channel MOSFET

Description

RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-89 The SGM2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SGM2306 is universally used for all commercial-industrial applicatio

Features

  • Capable Of 2.5V Gate Drive.
  • Lower On-Resistance D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3VGS@4.5V Continuous Drain Current,3VGS@4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52.

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Datasheet Details

Part number SGM2306
Manufacturer SeCoS
File Size 477.43 KB
Description N-Channel MOSFET
Datasheet download datasheet SGM2306 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGM2306 Elektronische Bauelemente 5.3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Power Mos.FET Description RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-89 The SGM2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SGM2306 is universally used for all commercial-industrial applications. Features * Capable Of 2.5V Gate Drive * Lower On-Resistance D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3VGS@4.5V Continuous Drain Current,3VGS@4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.
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