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SGM2306
Elektronische Bauelemente
5.3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Power Mos.FET
Description
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
SOT-89
The SGM2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SGM2306 is
universally used for all commercial-industrial applications.
Features
* Capable Of 2.5V Gate Drive * Lower On-Resistance
D
G
S
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3VGS@4.5V Continuous Drain Current,3VGS@4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
REF.
A B C D E F
Millimeter Min. Max. 4.4 4.6 4.