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SDT7A5P03-C - P-Channel Enhancement Mode Power MOSFET

General Description

The SDT7A5P03-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SDT7A5P03-C meet the RoHS and Green Product requirement with full function reliability approved.

Key Features

  • Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SDT7A5P03-C -7.5A, -30V, RDS(O ) 21mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SDT7A5P03-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SDT7A5P03-C meet the RoHS and Green Product requirement with full function reliability approved. DFN2x2-6J FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 7A5P03 . = Date code PACKAGE INFORMATION Package MPQ DFN2×2-6J 3K Leader Size 7 inch REF. A B C D E F G Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.46 0.66 0.65 TYP. 0.20 0.