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Elektronische Bauelemente
SDT2P02
-2.2A, -20V, RDS(ON) 200 mΩ Dual-P Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to assure minimal power loss and heat dissipation.
DFN2x2-6L-J
FEATURES
Low RDS(on) trench technology Low thermal impedance Fast switching speed
APPLICATIONS
Battery-powered instruments Portable computing Mobile phones GPS units and media players
PACKAGE INFORMATION
Package
MPQ
DFN2×2-6L-J
3K
Leader Size 7 inch
REF.
A B C D E F
Millimeter
Min. Typ. Max.
2.00 BSC.
2.00 BSC.
0.675 0.75 0.80
0.30 Typ.
0.75 0.86
1.1
0.65BSC
REF.
G H J K L P
Millimeter Min. Typ. Max.
0.30 BSC 0.20 BSC 0 -- 0.
SDT2P02 Datasheet
