SCP60N03S-C mosfet equivalent, n-channel mosfet.
High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good he.
DFN3x3-8J
FEATURES
High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current G.
SCP60N03S-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
DFN3x3-8J
FEATURES
High density cell design for ultra low RDS(ON) Fully characterized avalan.
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