SCP35N03J-C - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

SCP35N03J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

High density cell design for ultra low RDS(ON).
Fully Characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special processing technology for high ESD capability.

SeCoS

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Datasheet Details

Part number	SCP35N03J-C
Manufacturer	SeCoS
File Size	277.26 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	SCP35N03J-C Datasheet
Additional preview pages of the SCP35N03J-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SCP35N03J-C 35A, 30V, RDS(ON) 7m N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SCP35N03J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Published: May 28, 2024 |