BUV21 transistor equivalent, silicon power transistor.
*Designed for high current,high speed and high power applications.
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collect.
*With TO-3 package
*High DC current gain@IC=12A
*Fast switching times
*Low collector saturation voltage APPLICATIONS
*Designed for high current,high speed and high power applications.
PINNING(see fig.2) PIN 1 2 3 Base Emitter Coll.
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