BUV20 transistor equivalent, silicon npn power transistor.
*Designed for high speed, high current, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETE.
*Low Collector Saturation Voltage-
: VCE(sat)= 0.6V(Max.) @IC= 25A
*High DC Current Gain-
: hFE= 20(Min.)@ IC= 25A
*High Switching Speed
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS.
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