2SA1133 Overview
Description
With TO-220 package - High breakdown voltage - High power dissipation - Complement to type 2SC2660/2660A APPLICATIONS - For power amplifier and TV vertical deflection output applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol SYMBOL VCBO PARAMETER Collector-base voltage 2SA1133 VCEO Collector-emitter voltage 2SA1133A VEBO IC ICM PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -180 -6 -2.0 -3.0 30 150 -55~150 V A A W CONDITIONS Open emitter VALUE -200 -150 V UNIT V SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SA1133 V(BR)CEO Collector-emitter breakdown voltage 2SA1133A V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=-0.5mA ,IE=0 IE=-0.5mA ,IC=0 IC=-500mA; IB=-50mA IC=-400mA ; VCE=-10V VCB=-200V; IE=0 VEB=-4V; IC=0 IC=-150m A ; VCE=-10V IC=-400mA ; VCE=-10V 60 50 IC=-5mA ,IB=0 -180 -200 -6 -1.0 -1.0 -50 -50 240 V V V V µA µA CONDITIONS MIN -150 V TYP. MAX UNIT SYMBOL hFE-1 Classifications Q 60-140 P 100-240 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1133 2SA1133A Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3.
