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2SA1133 - POWER TRANSISTOR

Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V (Min) Large Collector Power Dissipation Complement to Type 2SC2660 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and TV vertical deflection ou

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isc Silicon PNP Power Transistor 2SA1133 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V (Min) ·Large Collector Power Dissipation ·Complement to Type 2SC2660 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A PC Collector Power Dissipation 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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