LE28F4001T
LE28F4001T is 4 MEG (524288 words x 8 bits) Flash Memory manufactured by SANYO.
Overview
The LE28F4001 Series ICs are 524288-word × 8-bit flash memory products that support on-board reprogramming and feature
5 V single-voltage power supply operation. CMOS peripheral circuits were adopted for high speed, low power, and ease of use. These products support a sector (256 bytes) erase function for fast data rewriting.
Package Dimensions unit: mm 3205-SOP32
[LE28F4001M]
Features
- Fabricated in a highly reliable 2-layer polysilicon CMOS flash EEPROM process.
- Read and write operation from a 5 V single-voltage power supply
- Sector erase function: 256 bytes per sector
- Fast access time: 150/200 ns
- Low power
- Operating current (read): 25 m A (maximum)
- Standby current: 20 µA (maximum)
- Highly reliable read and write operations
- Sector write cycles: 104 cycles
- Data retention time: 10 years
- Address and data latches
- Self-timer erase and programming
- Byte programming time: 35 µs (maximum)
- Write plete detection: Toggle bit and data polling
- Hardware and software data protection
- Pin assignment conforms to the JEDEC byte-wide EEPROM standard
- Packages SOP 32-pin (525 mil) plastic package :LE28F4001M TSOP 40-pin (10 × 14 mm) plastic package :LE28F4001T TSOP 40-pin (10 × 14 mm) plastic package :LE28F4001R
SANYO: SOP32 unit: mm 3087A-TSOP40
[LE28F4001T, R]
SANYO: TSOP40 (TYPE-I)
These FLASH MEMORY products incorporate technology licensed Silicon Storage Technology, Inc.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
63096HA (OT) No. 5239-1/14
LE28F4001M, T, R-15/20 Block Diagram
Pin Assignments
No. 5239-2/14
LE28F4001M, T, R-15/20 TSOP40 Standard TSOP40 Reversed
Pin Functions
Symbol A18 to A0 Address input Pin Functions Supply the memory address to these pins. The address is latched internally during a write cycle. These pins output data during a read cycle and input data during a write cycle. Data is latched internally during a write...