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LE28F4001R-15 - 4 MEG (524288 words x 8 bits) Flash Memory

Features

  • Fabricated in a highly reliable 2-layer polysilicon CMOS flash EEPROM process.
  • Read and write operation from a 5 V single-voltage power supply.
  • Sector erase function: 256 bytes per sector.
  • Fast access time: 150/200 ns.
  • Low power.
  • Operating current (read): 25 mA (maximum).
  • Standby current: 20 µA (maximum).
  • Highly reliable read and write operations.
  • Sector write cycles: 104 cycles.
  • Data retention time: 10 y.

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Part Number Description
LE28F4001R-20 4 MEG (524288 words x 8 bits) Flash Memory
LE28F4001R 4 MEG (524288 words x 8 bits) Flash Memory
LE28F4001C 4M-Bit (512k 8) Flash EEPROM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN*5239A CMOS LSI LE28F4001M, T, R-15/20 4 MEG (524288 words × 8 bits) Flash Memory Preliminary Overview The LE28F4001 Series ICs are 524288-word × 8-bit flash memory products that support on-board reprogramming and feature 5 V single-voltage power supply operation. CMOS peripheral circuits were adopted for high speed, low power, and ease of use. These products support a sector (256 bytes) erase function for fast data rewriting. Package Dimensions unit: mm 3205-SOP32 [LE28F4001M] Features • Fabricated in a highly reliable 2-layer polysilicon CMOS flash EEPROM process.
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