LE28F4001R Datasheet | SANYO

ature 5 V single-voltage power supply operation. CMOS peripheral circuits were adopted for high speed, low power, and ease of use. These products support a sector (256 bytes) erase function for fast data rewriting. Package Dimensions unit: mm 3205-SOP32 [LE28F4001M] Features - Fabricated in a highly reliable 2-layer polysilicon CMOS flash EEPROM process. - Read and write operation from a 5 V single-voltage power supply - Sector erase function: 256 bytes per sector - Fast access time: 150/200 ns - Low power - Operating current (read): 25 m A (maximum) - Standby current: 20 µA (maximum) - Highly reliable read and write operations - Sector write cycles: 104 cycles - Data retention time: 10 years - Address and data latches - Self-timer erase and programming - Byte programming time: 35 µs (maximum) - Write plete detection: Toggle bit and data polling - Hardware and software data protection - Pin assignment conforms to the JEDEC byte-wide EEPROM standard - Packages SOP 32-pin (525 mil) plastic package :LE28F4001M TSOP 40-pin (10 × 14 mm) plastic package :LE28F4001T TSOP 40-pin (10 × 14 mm) plastic package :LE28F4001R SANYO: SOP32 unit: mm 3087A-TSOP40 [LE28F4001T, R] SANYO: TSOP40 (TYPE-I) These FLASH MEMORY products incorporate technology licensed Silicon Storage Technology, Inc. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 63096HA (OT) No. 5239-1/14 LE28F4001M, T, R-15/20 Block Diagram Pin...