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K3831 - 2SK3831

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive.
  • Motor drive, DC / DC Converter.
  • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse).
  • 1 Avalanche Current.
  • 2.
  • 1. VDD=20V, L=50µH, IAV=85A.
  • 2. L≤50µH.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN8028 2SK3831 N-Channel Silicon MOSFET 2SK3831 General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC Converter. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *1. VDD=20V, L=50µH, IAV=85A *2. L≤50µH, 1 Pulse Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Tc=25°C Ratings 60 ±20 85 340 2.
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