Low Qg. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature Storage Temperature
Symbol VDSS VGSS
ID IDP
PD
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K3850. For precise diagrams, and layout, please refer to the original PDF.
Ordering number : ENN8193 2SK3850 2SK3850 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Best suited for motor drive. • Low ON-resistan...
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Applications Features • Best suited for motor drive. • Low ON-resistance. • Low Qg.
K3850 Datasheet
