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2SK2347 - N-Channel Silicon MOSFET

Key Features

  • Low ON resistance, ultrahigh-speed switching.
  • High reliability (Adoption of HVP process). Package Dimensions unit: mm 2131-TO-3JML [2SK2347] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions 1 : Gate 2 : Drain 3 : Source SANYO: TO-3JML PW≤10µs, duty cycle≤1% Tc=.

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Part Number Description
2SK2348 N-Channel Silicon MOSFET
2SK2349 N-Channel Silicon MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN5424A N-Channel Silicon MOSFET 2SK2347 High-Voltage, High-Speed Switching Applications Features • Low ON resistance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). Package Dimensions unit: mm 2131-TO-3JML [2SK2347] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions 1 : Gate 2 : Drain 3 : Source SANYO: TO-3JML PW≤10µs, duty cycle≤1% Tc=25°C Ratings 1000 ±30 20 40 4.