• Part: 2SB1136
  • Description: PNP Transistor
  • Category: Transistor
  • Manufacturer: SANYO
  • Size: 104.61 KB
Download 2SB1136 Datasheet PDF
SANYO
2SB1136
Features - Low-saturation collector-to-emitter voltage : VCE(sat)=- 0.5V (PNP), 0.4V (NPN) max. - Wide ASO leading to high resistance to breakdown. - Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1136/2SD1669] ( ) : 2SB1136 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage ICBO IEBO h FE1 h FE2 f T VCE(sat) VCB=(- )40V, IE=0 VEB=(- )4V, IC=0 VCE=(- )2V, IC=(- )1A VCE=(- )2V, IC=(- )5A VCE=(- )5V, IC=(- )1A IC=(- )6A, IB=(- )0.6A - : The 2SB1136/2SD1669 are classified by 1A h FE as follows : 70 Q 140 100 R...