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2SB1136 - PNP Transistor

Features

  • Low-saturation collector-to-emitter voltage : VCE(sat)=.
  • 0.5V (PNP), 0.4V (NPN) max.
  • Wide ASO leading to high resistance to breakdown.
  • Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1136/2SD1669] ( ) : 2SB1136 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SB1131 PNP Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:2092B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1136/2SD1669 50V/12A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other genral high-current switching applications. Features · Low-saturation collector-to-emitter voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Wide ASO leading to high resistance to breakdown. · Micaless package facilitating mounting.
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