Diffused Junction Silicon Diode
Ultrahigh-Speed Switching Diode
High breakdown voltage (VRRM=400V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Fo.
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Ordering number : ENA1612
RD2004LS-SB5
SANYO Semiconductors
DATA SHEET
RD2004LS-SB5
Features
• • • • •
Diffused Junction Silicon Diode
Ultrahigh-Speed Switching Diode
High breakdown voltage (VRRM=400V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery.