Datasheet4U Logo Datasheet4U.com

D1907 - PNP/NPN Epitaxial Planar Type Silicon Transistors

Datasheet Summary

Features

  • Suitable for sets whose height is restricted.
  • Low collector to emitter saturation voltage.
  • Large current capacity. Package Dimensions unit:mm 2049B [2SB1271/2SD1907] ( ) : 2SB1271 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25.

📥 Download Datasheet

Datasheet preview – D1907

Datasheet Details

Part number D1907
Manufacturer Sanyo
File Size 163.16 KB
Description PNP/NPN Epitaxial Planar Type Silicon Transistors
Datasheet download datasheet D1907 Datasheet
Additional preview pages of the D1907 datasheet.

📁 Similar Datasheet

  • D1910 - 2SD1910 (Wing Shing Electronic)
  • D1911 - 2SD1911 (Wing Shing Computer Components)
  • D1912 - 2SD1912 (Inchange Semiconductor)
  • D1913 - 2SD1913 (Sanyo Semicon Device)
  • D1918 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • D1918 - 2SD1918 (Rohm)
  • D1929 - 2SD1929 (Rohm)
  • D1933 - 2SD1933 (Rohm)
  • D1941 - 2SD1941 (SavantIC)
  • D1944 - 2SD1944 (Rohm)
Other Datasheets by Sanyo
  • D1902 - 2SD1902
  • D1903 - PNP/NPN Epitaxial Planar Silicon Transistors
  • D1904 - PNP/NPN Epitaxial Planar Silicon Transistors
  • D1906 - PNP/NPN Epitaxial Planar Type Silicon Transistors
  • D1935 - PNP/NPN Epitaxial Planar Silicon Transistors
  • D1936 - PNP/NPN Epitaxial Planar Silicon Transistors
  • D1998 - PNP / NPN Epitaxial Planar Silicon Transistors
  • D1999 - PNP / NPN Epitaxial Planar Transistors

Full PDF Text Transcription

Click to expand full text
Ordering number:EN2267B PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1271/2SD1907 High-Current Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage. · Large current capacity.
Published: |