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Sanyo Electric Components Datasheet

C3792 Datasheet

2SC3792

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Ordering number:ENN1858B
NPN Epitaxial Planar Silicon Transistor
2SC3792
High hFE, Low-Frequency
General-Purpose Amplifier Applications
Applications
· Low frequency general-purpose amplifiers, drivers,
muting circuits.
Features
· Adoption of FBET process.
· High DC current gain.
· High VEBO (VEBO25V).
· High reverse hFE (150 typ).
· Small ON resistance [Ron=1(IB=5mA)]
Package Dimensions
unit:mm
2003B
[2SC3792]
5.0
4.0
4.0
0.45
0.5
0.45 0.44
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCB=40V, IE=0
VEB=20V, IC=0
VCE=5V, IC=10mA
VCE=10V, IC=10mA
VCB=10V, f=1MHz
123
1.3 1.3
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
Ratings
50
20
25
500
800
100
500
150
55 to +150
Unit
V
V
V
mA
mA
mA
mW
˚C
˚C
Ratings
min typ max
Unit
0.1 µA
0.1 µA
300 1200
250 MHz
4.0 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70804TN (PC)/D0198HA (KT)/6140MO/5127KI/N295KI, TS No.1858–1/4


Sanyo Electric Components Datasheet

C3792 Datasheet

2SC3792

No Preview Available !

Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
2SC3792
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=100mA, IB=2mA
IC=100mA, IE=2mA
IC=10µA, IE=0
IC=1mA, RBE=
IE=10µA, IC=0
Ratings
min typ
0.12
0.85
50
20
25
max
0.5
1.2
Unit
V
V
V
V
V
IC -- VCE
200
0.8mA 0.6mA
160
0.4mA
120
0.2mA
80
40
0 IB=0
0 0.2 0.4 0.6 0.8 1.0
Collector-to-Emitter Voltage, VCE V ITR06022
IC -- VBE
600
VCE=5V
500
400
300
200
100
0
0
1000
7
5
3
2
0.4 0.8 1.2 1.6 2.0
Base-to-Emitter Voltage, VBE V ITR06024
fT -- IC
VCE=10V
100
7
5
3
2
10
1.0
2 3 5 7 10 2 3 5 7 100 2 3 5 71000
Collector Current, IC mA
ITR06026
20
16
12
8
4
0
0
2
1000
7
5
3
2
IC -- VCE
30µA
25µA
20µA
15µA
10µA
5µA
IB=0
2 4 6 8 10
Collector-to-Emitter Voltage, VCE V ITR06023
hFE -- IC
VCE=5V
Ta=120°C
25°C
--40°C
100
7
5
1.0
3
2
2 3 5 10 2 3 5 100 2 3 5 1000
Collector Current, IC mA
ITR06025
Cob -- VCB
f=1MHz
10
7
5
3
2
1.0
7
7 1.0
23
5 7 10
23
5 7 100
Collector-to-Base Voltage, VCB V ITR06027
No.1858–2/4


Part Number C3792
Description 2SC3792
Maker Sanyo
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C3792 Datasheet PDF






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