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Sanyo Electric Components Datasheet

C3786 Datasheet

2SC3786

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Ordering number:ENN2299A
NPN Epitaxial Planar Type Silicon Transistor
2SC3786
Driver Applications
Applications
· Suitable for use in switching of L load (motor
drivers, printer hammer drivers, relay drivers).
Features
· High DC current gain.
· Wide ASO.
· On-chip Zener diode of 60±10V between collector
and base.
· Uniformity in collector-to-base breakdown voltage.
· Large inductive load handling capability.
Package Dimensions
unit:mm
2043B
[2SC3786]
8.0
4.0
2.0
2.7
1.6
0.8
0.8
0.6
0.5
12 3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
* : On-chip Zener diode (60±10V)
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
2.4
4.8
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
VCB=40V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1.5A
VCE=5V, IC=1.5A
IC=1.5A, IB=6mA
IC=1.5A, IB=6mA
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126LP
Ratings
50*
50*
6
3
6
1.2
20
150
55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
10 µA
2 mA
1000 4000
180 MHz
1.0 1.5 V
2.0 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70804TN (PC)/D0198HA (KT)/D251MH/5257TA, TS No.2299–1/3


Sanyo Electric Components Datasheet

C3786 Datasheet

2SC3786

No Preview Available !

Continued from preceding page.
Parameter
Inductive Load Handling Capability
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Turn-on Time
Storage Time
Fall Time
2SC3786
Symbol
Conditions
Es/b
V(BR)CBO
V(BR)CEO
ton
tstg
tf
L=100mH, RBE=100
IC=100µA, IE=0
IC=1mA, RBE=
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ
25
50 60
50 60
0.2
3.5
0.7
max
70
70
Unit
mJ
V
V
µs
µs
µs
Switching Time Test Circuit
PW=50µs, Duty Cycle1%
IB1=--IB2=6mA
INPUT
RB
50VR
+
100µF
VBB=--5V
IC=250, IB1=--250, IB2=1.5A
OUTPUT
TUT
RL
+
470µF
VCC=20V
Es/b Test Circuit
VCC=20V, RBE=100
SW
L +VCC
TUT
IB RBE
10k300
IC -- VCE
5
5mA
4mA
4 3mA
3 2mA
2
1
0
0
10000
7
5
3
2
1000
7
5
3
2
1mA
800µA
600µA
400µA
IB=0
12 345
Collector-to-Emitter Voltage, VCE V ITR06014
hFE -- IC
VCE=5V
Ta=120°C
25°C
--40°C
100
5 7 0.1
2 3 5 7 1.0
23
Collector Current, IC A
5 7 10
ITR06016
IC -- VBE
4
VCE=5V
3
2
1
0
0
3
2
10
7
5
3
2
1.0
7
5
3
0.1
0.4 0.8 1.2 1.6 2.0 2.4
Base-to-Emitter Voltage, VBE V ITR06015
VCE(sat) -- IC
IC / IB=250
25°C
120°C
Ta=--40°C
23
5 7 1.0
23
Collector Current, IC A
5 7 10
ITR06017
No.2299–2/3


Part Number C3786
Description 2SC3786
Maker Sanyo
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C3786 Datasheet PDF






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