C3783 - Silicon NPN Power Transistor

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) High Switching Speed APPLICATIONS

High speed and high voltage switching applications.

Switching regulator applications.

High speed DC-DC converter applications.

Inchange Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	C3783
Manufacturer	Inchange Semiconductor
File Size	198.54 KB
Description	Silicon NPN Power Transistor
Datasheet	C3783 Datasheet
Additional preview pages of the C3783 datasheet.

📁 Similar Datasheet

C3780 - 2SC3780 (Sanyo)
C3781 - 2SC3781 (Sanyo)
C3782 - 2SC3782 (Sanyo Semicon Device)
C3785 - 2SC3785 (Sanyo)
C3786 - 2SC3786 (Sanyo)
C3787 - 2SC3787 (Sanyo)
C3788 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
C3789 - 2SC3789 (Sanyo Semicon Device)
C3704 - 2SC3704 (Panasonic)
C3705 - 2SC3705 (Sanyo)

Other Datasheets by Inchange Semiconductor

Full PDF Text Transcription

Click to expand full text

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3783 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed APPLICATIONS ·High speed and high voltage switching applications. ·Switching regulator applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7V IC Collector Current-Continuous 5 A ICM Collector Current-Pulse 7A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 3A 100 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.

Published: Jan 10, 2017 |