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Sanyo Electric Components Datasheet

C3751 Datasheet

2SC3751

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Ordering number : ENN1970B
2SC3751
NPN Triple Diffused Planar Silicon Transistor
2SC3751
800V / 1.5A Switching Regulator Applications
Features
High breakdown voltage and high reliability.
Fast switching speed.
Wide ASO.
Adoption of MBIT process.
Micaless package facilitating mounting.
Package Dimensions
unit : mm
2041A
10.0
3.2
[2SC3751]
4.5
2.8
1.6
1.2
Specifications
Absolute Maximum Ratings at Ta=25°C
0.75
123
2.55 2.55
2.55 2.55
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW300µs, Duty Cycle10%
Tc=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=800V, IE=0
VEB=5V, IC=0
min
2.4
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Ratings
1100
800
7
1.5
5
0.8
25
150
--55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Ratings
typ
max
Unit
10 µA
10 µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN


Sanyo Electric Components Datasheet

C3751 Datasheet

2SC3751

No Preview Available !

2SC3751
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
min typ
DC Current Gain
Gain-Bandwidth Product
hFE1
hFE2
fT
VCE=5V, IC=0.1A
VCE=5V, IC=0.5A
VCE=10V, IC=0.1A
10*
8
15
Output Capacitance
Cob VCB=10V, f=1MHz
35
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
IC=0.75A, IB=0.15A
IC=0.75A, IB=0.15A
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
V(BR)CBO IC=1mA, IE=0
V(BR)CEO IC=5mA, RBE=
1100
800
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Turn-On Time
Storage Time
Fall Time
V(BR)EBO
VCEX(sus)
ton
tstg
tf
IE=1mA, IC=0
IC=0.75A, IB1=--IB2=0.15A, L=5mH, clamped
VCC=400V, 5IB1=--2.5IB2=IC=1A, RL=400
VCC=400V, 5IB1=--2.5IB2=IC=1A, RL=400
VCC=400V, 5IB1=--2.5IB2=IC=1A, RL=400
7
800
* : The hFE1 of the 2SC3751 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
Rank
K
LM
hFE
10 to 20
15 to 30
20 to 40
max
40*
2.0
1.5
0.5
3.0
0.3
Unit
MHz
pF
V
V
V
V
V
V
µs
µs
µs
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
OUTPUT
INPUT
VR
50
RB
+
100µF
RL
400
+
470µF
VBE= --5V
VCC=400V
IC -- VCE
1.6
1.4
1.2
1.0 120mA
100mA
0.8 80mA
60mA
0.6 40mA
0.4 20mA
10mA
0.2 5mA IB=0
0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V ITR05871
VCE(sat) -- IC
10
7 IC / IB=5
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
--40°C 25°C
23
5 7 0.1
23
5 7 1.0
2
Collector Current, IC -- A
ITR05873
hFE -- IC
2
100
7
5 Ta=120°C
VCE=5V
3
2 25°C
10 --40°C
7
5
3
0.01
10
7
5
23
5 7 0.1
23
5 7 1.0
2
Collector Current, IC -- A
ITR05872
VBE(sat) -- IC
IC / IB=5
3
2
1.0
7
5
3
2
0.01
Ta= --40°C
25°C
120°C
2 3 5 7 0.1
2 3 5 7 1.0
2
Collector Current, IC -- A
ITR05874


Part Number C3751
Description 2SC3751
Maker Sanyo
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C3751 Datasheet PDF






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