SWD1N60 mosfet equivalent, n-channel mosfet.
* High ruggedness
* RDS(ON) (Max 12 Ω)@VGS=10V
* Gate Charge (Max 6nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
TO-251
TO-252
TO-126
1..
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteris.
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