* High ruggedness
* RDS(ON) (Max 0.1Ω)@VGS=10V
* Gate Charge (Typ 100nC)
* Improved dv/dt Capability
* 100% Avalanche Tested TO-220 TO-252 BVDSS : .

This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially des.

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