SW640 datasheet, mosfet equivalent, Samwin

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Features and benefits

N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.18 ohm : 18A : 40 nc : 139 W SW640 This power MOSFET is produced in SAMWIN wi.

Description

Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.18 ohm : 18A : 40 nc : 139 W SW640 This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power M.

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