SW630A mosfet equivalent, mosfet.
* High ruggedness
* RDS(ON) (Max 0.4 Ω)@VGS=10V
* Gate Charge (Typ 22nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
TO-220
TO-252
12 3
1 .
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteris.
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