SW3N90U mosfet equivalent, n-channel mosfet.
TO-251 TO-251M TO-252
* High ruggedness
* Low RDS(ON) (Typ 4.8Ω)@VGS=10V
* Low Gate Charge (Typ 19nC)
* Improved dv/dt Capability
* 100% Avalanche T.
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially .
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