SW3N80C mosfet equivalent, n-channel enhanced mode to-220f/to-251/to-252 mosfet.
TO-220F
TO-251 TO-252
* High ruggedness
* Low RDS(ON) (Typ 3.9Ω)@VGS=10V
* Low Gate Charge (Typ 12.5nC)
* Improved dv/dt Capability
* 100% Avalanch.
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteris.
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