KFH1G16Q2M memory equivalent, flash memory.
* Architecture
* Design Technology: 0.12um
* Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG121.
where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.
for below operations -. Reset -. Write Protection -. Burst Read Latency -. Dual Operation -. Invalid block definition and Identification method -. Error in write or read operation -. ECC 3. Revised program sequence 4. Some AC parameters are changed..
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