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K6T4016V4C - CMOS SRAM

Features

  • Process Technology: TFT.
  • Organization: 256K x16.
  • Power Supply Voltage K6T4016V4C Family: 3.0~3.6V K6T4016U4C Family: 2.7~3.3V.
  • Low Data Retention Volt.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K6T4016V4C, K6T4016U4C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 Initial draft - UB/LB power control 0.01 Errata correction 0.1 Revise - Add 3,3V product : K6T4016V4C 1.0 Revise - Specified CSP type. Draft Date July 4, 1998 Remark Preliminary August 17, 1998 September 11, 1998 Preliminary November 16, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.
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