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K6R1008V1B-C Datasheet, Samsung semiconductor

K6R1008V1B-C ram equivalent, 128kx8 bit high speed static ram.

K6R1008V1B-C Avg. rating / M : 1.0 rating-12

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K6R1008V1B-C Datasheet

Features and benefits


* Fast Access Time 8,10,12ns(Max.)
* Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 5mA(Max.) 0.7mA(Max.) - L-Ver. only Operating K6R1008V1B-8 : 160mA(.

Application

The K6R1008V1B is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. ORDERING INFORMATION K6R1008V1B-C8/C10/C12.

Description

The K6R1008V1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008V1B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cyc.

Image gallery

K6R1008V1B-C Page 1 K6R1008V1B-C Page 2 K6R1008V1B-C Page 3

TAGS

K6R1008V1B-C
128Kx8
Bit
High
Speed
Static
RAM
Samsung semiconductor

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