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K6R1008V1B-L - 128Kx8 Bit High Speed Static RAM

Download the K6R1008V1B-L datasheet PDF. This datasheet also covers the K6R1008V1B-C variant, as both devices belong to the same 128kx8 bit high speed static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K6R1008V1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits.

The K6R1008V1B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.

Key Features

  • Fast Access Time 8,10,12ns(Max. ).
  • Low Power Dissipation Standby (TTL) : 50mA(Max. ) (CMOS) : 5mA(Max. ) 0.7mA(Max. ) - L-Ver. only Operating K6R1008V1B-8 : 160mA(Max. ) K6R1008V1B-10 : 155mA(Max. ) K6R1008V1B-12 : 150mA(Max. ).
  • Single 3.3±0.3V Power Supply.
  • TTL Compatible Inputs and Outputs.
  • Fully Static Operation - No Clock or Refresh required.
  • Three State Outputs.
  • 2V Minimum Data Retention ; L-Ver. only www. DataSheet4U. com.
  • Cen.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K6R1008V1B-C_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K6R4008C1C 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4008C1C-C 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4008C1C-E 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4008C1C-I 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4016C1D CMOS SRAM Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
K6R1008V1B-C 128Kx8 Bit High Speed Static RAM
K6R1008V1B-I 128Kx8 Bit High Speed Static RAM
K6R1008V1B-P 128Kx8 Bit High Speed Static RAM
K6R1008V1D 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1A-C12 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P Document Title Preliminary PRELIMINARY CMOS SRAM 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. Rev. 0.0 Rev.1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1.1. Replace Design Target to Preliminary. Release to Final Data Sheet. 2.1. Delete Preliminary. 2.2. Delete 32-SOJ-300 package. 2.3. Add Capacitive load of the test environment in A.C test load. 2.4. Change D.C characteristics. Previous spec. Changed spec. Items (8/10/12ns part) (8/10/12ns part) ICC 160/150/140mA 160/155/150mA ISB 30mA 50mA Change Standby and Data Retention Current for L-ver. Items Previous spec. Changed spec. ISB1 0.5mA 0.7mA IDR at 3.