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K6R1008V1B-L Datasheet, Samsung semiconductor

K6R1008V1B-L ram equivalent, 128kx8 bit high speed static ram.

K6R1008V1B-L Avg. rating / M : 1.0 rating-14

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K6R1008V1B-L Datasheet

Features and benefits


* Fast Access Time 8,10,12ns(Max.)
* Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 5mA(Max.) 0.7mA(Max.) - L-Ver. only Operating K6R1008V1B-8 : 160mA(.

Application

The K6R1008V1B is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. ORDERING INFORMATION K6R1008V1B-C8/C10/C12.

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K6R1008V1B-L Page 1 K6R1008V1B-L Page 2 K6R1008V1B-L Page 3

TAGS
K6R1008V1B-L
128Kx8
Bit
High
Speed
Static
RAM
K6R1008V1B-C
K6R1008V1B-I
K6R1008V1B-P
Samsung semiconductor
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