- Part: K4X51163PE-LE
- Description: 32Mx16 Mobile DDR SDRAM
- Manufacturer: Samsung Semiconductor
- Size: 576.04 KB
Page 2
Page 3
K4X51163PE-LE Key Features
- VDD/VDDQ = 1.8V/1.8V
- Double-data-rate architecture; two data transfers per clock cycle
- Bidirectional data strobe(DQS)
- Four banks operation
- Differential clock inputs(CK and CK)
- MRS cycle with address key programs
- CAS Latency ( 3 )
- Burst Length ( 2, 4, 8, 16 )
- Burst Type (Sequential & Interleave)
- EMRS cycle with address key programs
Other K4X51163PE-LE Datasheets
