Datasheet4U Logo Datasheet4U.com
Samsung Semiconductor logo

K4X51163PE-LE Datasheet

Manufacturer: Samsung Semiconductor
K4X51163PE-LE datasheet preview

K4X51163PE-LE Details

Part number K4X51163PE-LE
Datasheet K4X51163PE-LE K4X51163PE-L Datasheet (PDF)
File Size 576.04 KB
Manufacturer Samsung Semiconductor
Description 32Mx16 Mobile DDR SDRAM
K4X51163PE-LE page 2 K4X51163PE-LE page 3

K4X51163PE-LE Overview

K4X51163PE - L(F)E/G 32Mx16 Mobile DDR SDRAM.

K4X51163PE-LE Key Features

  • VDD/VDDQ = 1.8V/1.8V
  • Double-data-rate architecture; two data transfers per clock cycle
  • Bidirectional data strobe(DQS)
  • Four banks operation
  • Differential clock inputs(CK and CK)
  • MRS cycle with address key programs
  • CAS Latency ( 3 )
  • Burst Length ( 2, 4, 8, 16 )
  • Burst Type (Sequential & Interleave)
  • EMRS cycle with address key programs

Similar Datasheets

Brand Logo Part Number Description Manufacturer
Samsung Electronics Logo K4X51163PG-FGC6 32Mx16 Mobile DDR SDRAM Samsung Electronics
Samsung Electronics Logo K4X51163PG-FGC7 32Mx16 Mobile DDR SDRAM Samsung Electronics
Samsung Electronics Logo K4X51163PG-FGC8 32Mx16 Mobile DDR SDRAM Samsung Electronics

K4X51163PE-LE Distributor

Samsung Semiconductor Datasheets

More from Samsung Semiconductor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts