K4X51163PE-LE Datasheet 32Mx16 Mobile DDR SDRAM

Manufacturer: Samsung Semiconductor

Download the K4X51163PE-LE datasheet PDF. This datasheet also includes the K4X51163PE-L variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

K4X51163PE-LE 32mx16 mobile ddr sdram by Samsung Semiconductor - Datasheet Preview — Note: The manufacturer provides a single datasheet file (K4X51163PE-L_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	K4X51163PE-LE
Manufacturer	Samsung Semiconductor
File Size	576.04 KB
Description	32Mx16 Mobile DDR SDRAM
Datasheet	K4X51163PE-LE Datasheet

Overview

K4X51163PE - L(F)E/G 32Mx16 Mobile DDR SDRAM 1.

Key Features

VDD/VDDQ = 1.8V/1.8V.
Double-data-rate architecture; two data transfers per clock cycle.
Bidirectional data strobe(DQS).
Four banks operation.
Differential clock inputs(CK and CK).
MRS cycle with address key programs - CAS Latency ( 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave).
EMRS cycle with address key programs - Partial Array Self Refresh ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control ( Fu.

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