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K4X51163PE-LE Datasheet Samsung semiconductor

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Samsung semiconductor · K4X51163PE-LE File Size : 576.04KB · star-12

Features and Benefits


• VDD/VDDQ = 1.8V/1.8V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• MRS cycle wi.

K4X51163PE-LE K4X51163PE-LE K4X51163PE-LE
TAGS
32Mx16
Mobile
DDR
SDRAM
K4X51163PE-LE
K4X51163PE-FG
K4X51163PC

Stock and Price

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