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K4X51163PE-LE

Manufacturer: Samsung Semiconductor

K4X51163PE-LE datasheet by Samsung Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

K4X51163PE-LE datasheet preview

K4X51163PE-LE Datasheet Details

Part number	K4X51163PE-LE
Datasheet	K4X51163PE-LE K4X51163PE-L Datasheet (PDF)
File Size	576.04 KB
Manufacturer	Samsung Semiconductor
Description	32Mx16 Mobile DDR SDRAM

K4X51163PE-LE Overview

K4X51163PE - L(F)E/G 32Mx16 Mobile DDR SDRAM.

K4X51163PE-LE Key Features

VDD/VDDQ = 1.8V/1.8V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Four banks operation
Differential clock inputs(CK and CK)
MRS cycle with address key programs
CAS Latency ( 3 )
Burst Length ( 2, 4, 8, 16 )
Burst Type (Sequential & Interleave)
EMRS cycle with address key programs

K4X51163PG-FGC6 from other manufacturers

View K4X51163PG-FGC6 datasheet index

Brand Logo	Part Number	Description	Other Manufacturers
	K4X51163PG-FGC6	32Mx16 Mobile DDR SDRAM	Samsung Electronics
	K4X51163PG-FGC7	32Mx16 Mobile DDR SDRAM	Samsung Electronics
	K4X51163PG-FGC8	32Mx16 Mobile DDR SDRAM	Samsung Electronics

More Datasheets from Samsung Semiconductor

View all Samsung Semiconductor datasheets

Part Number	Description
K4X51163PE-FG	32Mx16 Mobile DDR SDRAM
K4X51163PC	32M x16 Mobile-DDR SDRAM
K4X51163PC-FE	32M x16 Mobile-DDR SDRAM
K4X51163PC-FG	32M x16 Mobile-DDR SDRAM
K4X51163PC-LE	32M x16 Mobile-DDR SDRAM
K4X51163PC-LG	32M x16 Mobile-DDR SDRAM
K4X51323PC-7E	16M x32 Mobile-DDR SDRAM
K4X51323PC-7G	16M x32 Mobile-DDR SDRAM
K4X51323PC-8E	16M x32 Mobile-DDR SDRAM
K4X51323PC-8G	16M x32 Mobile-DDR SDRAM

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