K4X51163PG-FGC6 - 32Mx16 Mobile DDR SDRAM

Samsung Electronics

General Description

7 8.0 Functional Description8 9.0 Mode Register Definition 9 9.1 Mode Register Set(MRS) 9 9.2 Extended Mode Register Set(EMRS)11 9.3 Internal Temperature Compensated Self Refresh (TCSR) 12 9.4 Partial Array Self Refresh (PASR)12 10.0 Absolute maximum ratings 13 11.0 DC Operating Conditions 13 12.0 D

Key Features

4 2.0 Operating Frequency4 3.0 Address configuration4 4.0 Ordering Information 4 5.0.

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K4X51163PG-FGC6 32mx16 mobile ddr sdram by Samsung Electronics - Datasheet Preview

Datasheet Details

Part number	K4X51163PG-FGC6
Manufacturer	Samsung Electronics
File Size	648.56 KB
Description	32Mx16 Mobile DDR SDRAM
Datasheet	K4X51163PG-FGC6 Datasheet

Full PDF Text Transcription for K4X51163PG-FGC6 (Reference)

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Final K4X51163PG - FGC6(7)(8) Mobile DDR SDRAM 32Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) www.DataSheet4U.com -1- Revision 1.0 May 2008 Final K4X51163PG - FGC6(7)(8) Do...

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Sheet4U.com -1- Revision 1.0 May 2008 Final K4X51163PG - FGC6(7)(8) Document Title 32Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) Mobile DDR SDRAM Revision History Revision No. 0.0 1.0 History - First version for target specification. - Only Fast slew rate as Specification value for tIS,tIH,tDS,tDH Draft Date Apr. 14, 2008 Apr. 30, 2008 Remark Target Preliminary Editor J.Y.Bae W.H.Cho www.DataSheet4U.com -2- Revision 1.0 May 2008 K4X51163PG - FGC6(7)(8) Table Of Contents 32Mx16 Mobile DDR SDRAM Final Mobile DDR SDRAM 1.0 FEATURES ................................................................................................

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