K4X51163PC
Key Features
- Mobile-DDR SDRAM
- 1.8V power supply, 1.8V I/O power
- Double-data-rate architecture; two data transfers per clock cycle
- Bidirectional data strobe(DQS)
- Four banks operation
- Differential clock inputs(CK and CK)
- Deep Power Down Mode
- All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
- Data I/O transactions on both edges of data strobe, DM for masking
- Edge aligned data output, center aligned data input
