K4X1G323PC-FE, K4X1G323PC-L Datasheet - Samsung semiconductor

K4X1G323PC-FE 32Mx32 Mobile DDR SDRAM

Symbol CK, CK Type Input Description Mobile DDR SDRAM Clock : CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK. Internal clock signals are derived from CK/CK. Clock Enable : CKE HIGH activa.

K4X1G323PC-FE Features

* VDD/VDDQ = 1.8V/1.8V

* Double-data-rate architecture; two data transfers per clock cycle

* Bidirectional data strobe(DQS)

* Four banks operation

* Differential clock inputs(CK and CK)

* MRS cycle with address key programs - CAS Latency ( 3 ) - Burst

K4X1G323PC-L_Samsungsemiconductor.pdf

K4X1G323PC-FE Datasheet Preview — This datasheet PDF includes multiple part numbers: K4X1G323PC-FE, K4X1G323PC-L. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

K4X1G323PC-FE, K4X1G323PC-L

Manufacturer:

Samsung semiconductor

File Size:

605.18 KB

Description:

32mx32 mobile ddr sdram.

Note:

This datasheet PDF includes multiple part numbers: K4X1G323PC-FE, K4X1G323PC-L.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

K4X1G323PC-FG 32Mx32 Mobile DDR SDRAM (Samsung semiconductor)

K4X1G323PC-LE 32Mx32 Mobile DDR SDRAM (Samsung semiconductor)

K4X1G323PC-LG 32Mx32 Mobile DDR SDRAM (Samsung semiconductor)

K4X1G163PC-FE Mobile DDR SDRAM (Samsung semiconductor)

K4X1G163PC-FG Mobile DDR SDRAM (Samsung semiconductor)

K4X1G163PC-LE Mobile DDR SDRAM (Samsung semiconductor)

K4X1G163PC-LG Mobile DDR SDRAM (Samsung semiconductor)

K4X1G163PE-FGC6 64Mx16 Mobile DDR SDRAM (Samsung)

TAGS

K4X1G323PC-FE K4X1G323PC-L 32Mx32 Mobile DDR SDRAM Samsung semiconductor

K4X1G323PC-FE Distributor