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* Preliminary UtRAM www.DataSheet4U.com GENERAL DESCRIPTION The K1S1616B1A is fabricated by SAMSUNG′s advanced CMOS technology using o.

The K1S1616B1A is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual .

K1S1616BCA

K1S161611A

K1S161611A-I

K1S16161CA

K1S16161CA-I

K1S2816BCM

K1S321611C

K1S321611C-FI70

K1S321611C-I

K1S321615M

K1S32161CC

K1S3216B1C

K1S3216BCC

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