Datasheet Details
| Part number | K1S321615M |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 206.57 KB |
| Description | 2Mx16 bit Uni-Transistor Random Access Memory |
| Download |
K1S321615M Download (PDF)
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| Part number | K1S321615M |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 206.57 KB |
| Description | 2Mx16 bit Uni-Transistor Random Access Memory |
| Download |
K1S321615M Download (PDF)
|
|
|
|
The K1S321615M is fabricated by SAMSUNG’ s advanced CMOS technology using one transistor memory cell.
The device support, extended temperature range and 48 ball Chip Scale Package for user flexibility of system design.
The device also supports deep power down mode
K1S321615M Document Title 2Mx16 bit Uni-Transistor Random Access Memory www.DataSheet4U.com UtRAM Revision History Revision No.
History 0.0 Initial Draft - Design target Revised - Change package type from FBGA to TBGA.
- Improve operating current from 30mA to 25mA.
| Part Number | Description |
|---|---|
| K1S32161CC | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S3216B1C | 2Mx16 bit Uni-Transistor Random Access Memory |
| K1S3216BCD | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S1616B1A | 1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616BCA | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S2816BCM | 8Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S64161CC | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S6416BCC | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |