| Part number | K1S321615M |
|---|---|
| Datasheet | K1S321615M_Samsungsemiconductor.pdf |
| File Size | 206.57 KB |
| Manufacturer | Samsung Semiconductor |
| Description | 2Mx16 bit Uni-Transistor Random Access Memory |
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The K1S321615M is fabricated by SAMSUNG’ s advanced CMOS technology using one transistor memory cell. The device support, extended temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
See all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K1S32161CC | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S3216B1C | 2Mx16 bit Uni-Transistor Random Access Memory |
| K1S3216BCD | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S1616B1A | 1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616BCA | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S2816BCM | 8Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S64161CC | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S6416BCC | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
