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M53230410DB0, M53230400DB0 Datasheet - Samsung Semiconductor

M53230410DB0 (M532304x0DB0/DW0) DRAM Module

The Samsung M5323040(1)0D is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M5323040(1)0D consists of eight CMOS 4Mx4bits DRAMs in 24-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

M53230410DB0 Features

* Part Identification - M53230400DW0-C(4096 cycles/64ms Ref, SOJ, Solder) - M53230400DB0-C(4096 cycles/64ms Ref, SOJ, Gold) - M53230410DW0-C(2048 cycles/32ms Ref, SOJ, Solder) - M53230410DB0-C(2048 cycles/32ms Ref, SOJ, Gold)

* Extended Data Out

* CAS-before-RAS refresh capab

M53230400DB0_SamsungSemiconductor.pdf

This datasheet PDF includes multiple part numbers: M53230410DB0, M53230400DB0. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

M53230410DB0, M53230400DB0

Manufacturer:

Samsung Semiconductor

File Size:

421.46 KB

Description:

(m532304x0db0/dw0) dram module.

Note:

This datasheet PDF includes multiple part numbers: M53230410DB0, M53230400DB0.
Please refer to the document for exact specifications by model.

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TAGS

M53230410DB0 M53230400DB0 M532304x0DB0 DW0 DRAM Module Samsung Semiconductor

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