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M53230404BT0-C Datasheet

Manufacturer: Samsung Semiconductor
M53230404BT0-C datasheet preview

Datasheet Details

Part number M53230404BT0-C
Datasheet M53230404BT0-C_SamsungSemiconductor.pdf
File Size 539.89 KB
Manufacturer Samsung Semiconductor
Description (M53230404BT0/BY0) DRAM Module
M53230404BT0-C page 2 M53230404BT0-C page 3

M53230404BT0-C Overview

The Samsung M53230404BY0/BT0-C is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M53230404BY0/BT0-C consists of two CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

M53230404BT0-C Key Features

  • Part Identification
  • M53230404BY0-C(4K cycles/64ms Ref, TSOP, Solder)
  • M53230404BT0-C(4K cycles/64ms Ref, TSOP, Gold)
  • Extended Data Out Mode Operation
  • CAS-before-RAS & Hidden Refresh capability
  • RAS-only refresh capability
  • TTL patible inputs and outputs
  • Single +5V±10% power supply
  • JEDEC standard PDpin & pinout
  • PCB : Height(1000mil), single sided ponent
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