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M53230404BT0-C Datasheet (M53230404BT0/BY0) DRAM Module

Manufacturer: Samsung Semiconductor

Overview: www.DataSheet4U.com DRAM MODULE M53230404BY0/BT0-C 4Byte 4Mx32 SIMM (4Mx16 base) DataSheet4U.com DataShee Revision 0.1 June 1998 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DRAM MODULE Revision History Version 0.0 (Sept. 1997) M53230404BY0/BT0-C • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. • Changed the parameter tCAC(access time from CAS) from 13ns to 15ns @ -5 in AC CHARACTERISTICS. Version 0.0 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module. et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet4 U .com www.DataSheet4U.

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General Description

The Samsung M53230404BY0/BT0-C is a 4Mx32bits Dynamic RAM high density memory module.

The Samsung M53230404BY0/BT0-C consists of two CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate.

A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

Key Features

  • Part Identification - M53230404BY0-C(4K cycles/64ms Ref, TSOP, Solder) - M53230404BT0-C(4K cycles/64ms Ref, TSOP, Gold).
  • Extended Data Out Mode Operation.
  • CAS-before-RAS & Hidden Refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDpin & pinout.
  • PCB : Height(1000mil), single sided component.

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