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K3N5VU1000D-TC Datasheet

Manufacturer: Samsung Semiconductor
K3N5VU1000D-TC datasheet preview

K3N5VU1000D-TC Details

Part number K3N5VU1000D-TC
Datasheet K3N5VU1000D-TC K3N5V1000D-TC Datasheet (PDF)
File Size 81.04 KB
Manufacturer Samsung Semiconductor
Description 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM
K3N5VU1000D-TC page 2 K3N5VU1000D-TC page 3

K3N5VU1000D-TC Overview

Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The K3N5V(U)1000D-TC is packaged in a 44-TSOP2.

K3N5VU1000D-TC Key Features

  • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode)
  • Fast access time : 100ns(Max.)
  • Supply voltage : single +3.0V/ single +3.3V
  • Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.)
  • Fully static operation
  • All inputs and outputs TTL patible
  • Three state outputs
  • Package -. K3N5V(U)1000D-TC : 44-TSOP2-400

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