K8D1716UTC datasheet, memory equivalent, Samsung Electronics

Features and benefits

* Single Voltage, 2.7V to 3.6V for Read and Write operations
* Organization 1,048,576 x 16 bit (Word mode)
* Fast Read Access Time : 70ns
* Read While Pro.

Application

to require highdensity and cost-effective nonvolatile read/write storage solutions. PIN DESCRIPTION Pin Name A0 - A19 P.

Description

The K8D1716U featuring single 3.0V power supply, is a 16Mbit NOR-type Flash Memory organized as 2Mx8 or 1M x16. The memory architecture of the device is designed to divide its memory arrays into 39 blocks to be protected by the block group. This bloc.

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